Professor Jo Shien Ng
PhD, BEng
School of Electrical and Electronic Engineering
Professor of Semiconductor Devices
+44 114 222 5173
Full contact details
School of Electrical and Electronic Engineering
- Profile
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I received my BEng degree and PhD degrees in electronic engineering from the University of ºù«Ӱҵ, in 1999 and 2003, respectively.
After a postdoctoral position within the EPSRC National Centre for III–V Technologies (now part of EPSRC National Epitaxy Facility) for material and device characterization, I became a Royal Society Research Fellow from 2006 to 2016.
I am currently Professor of Semiconductor Devices. My research is focused on developing a type of light sensors capable of measuring the weakest possible light signals.
There is a wide range of applications that rely on detection of the weakest possible light signal. An example is quantum cryptography (whose encryption key is made up of these very weak light), which currently offers the ultimate encryption safety.
Other key applications for highly sensitive light sensors are high-speed optical communication systems, laser-based ranging (autonomous vehicles and high-resolution geographical mapping), medical imaging (X-ray computed tomography), and non-contact temperature measurements.
These systems depend on detecting light so weak that each signal comprises only hundreds or photons (which make up the light) or even down to a single photon.
I am particularly interested in using avalanche photodiodes (APDs) to detect the very weak light. This semiconductor device senses light and gives electrical current that varies with the light intensity.
A process called avalanche gain (similar to how snow avalanche grows in size as it accelerates down a snow-covered mountain) in the APDs amplifies the electrical current, improving the system’s performance in terms of signal-to-noise ratios.
My current research themes include Si SPADs for detecting visible light from Raman spectroscopy; low-noise APDs for high-speed optical communication systems; measurements of avalanche gain and noise from novel materials; simulation models for APDs and single photon avalanche diodes (SPADs).
- Qualifications
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- PhD (Electronic Engineering), University of ºù«Ӱҵ 2003
- BEng (Electronic Engineering), University of ºù«Ӱҵ 1999
- Research interests
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- Avalanche photodiodes (APDs)
- Geiger mode avalanche photodiodes or Single Photon Avalanche Diodes (SPADs)
- High-performance photodetectors for mid-infrared light detection
- Publications
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Journal articles
- . Applied Physics Letters, 125(22).
- . IEEE Transactions on Electron Devices, 1-6.
- . Journal of Lightwave Technology, 1-7.
- . IEEE Transactions on Electron Devices, 1-0.
- . IEEE Transactions on Electron Devices, 1-5.
- . Optica, 10(9), 1124-1124.
- . AIP Advances, 13(4), 045010-045010.
- . Applied Physics Letters, 122(5), 051103-051103.
- . Optics Express, 30(12), 21758-21758.
- . Optics Express, 30(11), 17946-17946.
- . Journal of Lightwave Technology, 1-1.
- . IEEE Photonics Technology Letters, 33(20), 1155-1158.
- . Journal of Lightwave Technology, 38(15), 4183-4183.
- . Semiconductor Science and Technology.
- . Journal of Lightwave Technology, 38(4), 989-995.
- . Journal of Lightwave Technology.
- . Journal of Lightwave Technology, 37(10).
- . Optics Express, 27(4), 5835-5842.
- . Journal of Open Research Software, 6(1).
- . Optics Express, 26(3), 3568-3576.
- . Optics Express, 25(26), 33610-33616.
- . IEEE Journal of Selected Topics in Quantum Electronics, 24(2).
- . IEEE Journal of Selected Topics in Quantum Electronics, 24(2).
- . Royal Society Open Science, 4, 170071-170071.
- . Solar Energy Materials and Solar Cells, 164, 28-31.
- . Optics Express, 25(3), 2818-2825.
- . Optics Express, 24(21), 24242-24242.
- . IEEE Photonics Technology Letters, 28(22), 2495-2498.
- . Journal of Applied Physics, 119(12), 124507-1-124507-9.
- . Journal of Instrumentation, 11(3).
- . Royal Society Open Science, 3(3), 150584-150584.
- . Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 813, 1-9.
- . IEEE Photonics Technology Letters, 28(4), 481-484.
- . Journal of Physics D: Applied Physics, 48(40), 405101-405101.
- . IEEE Sensors Journal, 15(10), 5555-5560.
- . Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 774, 29-33.
- . Optics Express, 22(19), 22608-22615.
- . Physica Status Solidi (B) Basic Research, 251(6), 1276-1281.
- . IEEE Journal of Selected Topics in Quantum Electronics, 20(6).
- . Journal of Instrumentation, 9.
- . JOURNAL OF APPLIED PHYSICS, 115(6).
- . IEEE PHOTONICS JOURNAL, 6(1).
- . Applied Physics Letters, 103(10).
- . Semiconductor Science and Technology, 28(9).
- . Opt Express, 21(7), 8630-8637.
- . IEEE Photonics Journal, 5(4).
- . JOURNAL OF INSTRUMENTATION, 7.
- . IEEE Transactions on Electron Devices, 59(4), 1063-1067.
- . IEEE Photonics Technology Letters, 24(23), 2191-2194.
- . Journal of Electronic Materials, 1-9.
- . Optics Express, 20(10), 10446-10452.
- . Applied Physics Letters, 101(1).
- . Physica Status Solidi (C) Current Topics in Solid State Physics, 9(2), 259-261.
- . Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 673, 10-15.
- . APPL PHYS LETT, 99(4).
- . IEEE ELECTR DEVICE L, 32(7), 919-921.
- . IEEE T ELECTRON DEV, 58(6), 1696-1701.
- . APPL PHYS LETT, 98(12).
- . Journal of Instrumentation, 6(12).
- Non-stoichiometric GaAsBi/GaAs (100) molecular beam epitaxy growth. Journal of Crystal Growth.
- . Journal of Instrumentation, 6(12).
- Impact Ionization Coefficients in Al0.52In0.48P. IEEE Electron Device Letters.
- . IEEE Electron Device Letters, 32(11), 1528-1530.
- The spectral resolution of high temperature GaAs photon counting soft X-ray photodiodes. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment.
- . IEEE Transactions on Electron Devices, 58(2), 486-489.
- . IEEE Photonics Technology Letters, 23(4), 233-235.
- . IEEE Transactions on Electron Devices, 58(1), 103-106.
- . NUCL INSTRUM METH A, 621(1-3), 453-455.
- . IEEE J QUANTUM ELECT, 46(8), 1153-1157.
- Temperature dependence of the avalanche multiplication process and the impact ionization coefficients in Al0.8Ga0.2As. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment.
- Modelling results of avalanche multiplication in AlGaAs soft X-ray APDs. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment.
- . J LIGHTWAVE TECHNOL, 27(15), 3294-3302.
- . IEEE J QUANTUM ELECT, 45(5-6), 566-571.
- . IEEE J QUANTUM ELECT, 45(1-2), 79-85.
- . NUCL INSTRUM METH A, 594(2), 202-205.
- . IEEE T ELECTRON DEV, 55(8), 1984-1990.
- . IEEE J QUANTUM ELECT, 44(3-4), 378-382.
- . IET OPTOELECTRONICS, 1(6), 249-254.
- . IEEE T ELECTRON DEV, 54(8), 2051-2054.
- . IEEE J SEL TOP QUANT, 13(4), 906-910.
- . IEEE J SEL TOP QUANT, 13(4), 919-925.
- . IEEE J QUANTUM ELECT, 43(5-6), 503-507.
- . J APPL PHYS, 101(6).
- . J MOD OPTIC, 54(2-3), 353-360.
- . IEEE T ELECTRON DEV, 54(1), 11-16.
- . MICROELECTRONICS JOURNAL, 37(12), 1468-1470.
- . IEEE J QUANTUM ELECT, 42(3-4), 397-403.
- . J APPL PHYS, 99(4).
- . IEEE PHOTONIC TECH L, 17(11), 2412-2414.
- . IEEE J QUANTUM ELECT, 41(8), 1092-1096.
- . Extended Abstracts of the 2004 International Conference on Solid State Devices and Materials.
- . APPL PHYS LETT, 85(5), 704-706.
- . APPL PHYS LETT, 84(13), 2322-2324.
- . Journal of Modern Optics, 51(9-10), 1315-1321.
- . APPL PHYS LETT, 83(24), 4951-4953.
- . APPL PHYS LETT, 83(14), 2820-2822.
- . IEEE T ELECTRON DEV, 50(4), 901-905.
- A general method for estimating the duration of avalanche multiplication. SEMICOND SCI TECH, 17(10), 1067-1071.
- . J APPL PHYS, 91(8), 5200-5202.
- Effect of dead space on avalanche speed. IEEE T ELECTRON DEV, 49(4), 544-549.
- . Sensors, 24(2), 321-321.
- . Semiconductor Science and Technology.
- . Journal of Instrumentation, 10(10), P10030-P10030.
- . Journal of Instrumentation, 9(08), T08005-T08005.
- . Journal of Instrumentation, 7(08), P08006-P08006.
- Design, fabrication and characterisation of InGaAs/InP single-photon avalanche diode detectors.
Conference proceedings papers
- . Optical Sensing and Detection VIII, 7 April 2024 - 12 April 2024.
- . Optical Sensing and Detection VIII (pp 69-69), 7 April 2024 - 12 April 2024.
- . Infrared Technology and Applications L, 21 April 2024 - 26 April 2024.
- . 2023 IEEE Conference on Antenna Measurements and Applications (CAMA), 15 November 2023 - 17 November 2023.
- . 2023 IEEE Conference on Antenna Measurements and Applications (CAMA), 15 November 2023 - 17 November 2023.
- . Optical Components and Materials XX, Vol. 12417 (pp 124170k-124170k), 28 January 2023 - 28 January 2023.
- . Optical Components and Materials XIX, 22 January 2022 - 28 March 2022.
- . 2018 IEEE Photonics Conference (IPC), 30 September 2018 - 4 October 2018.
- . Optical Sensing, Imaging, and Photon Counting: From X-Rays to THz, 19 August 2018 - 23 August 2018.
- . Optical Sensing, Imaging, and Photon Counting: From X-Rays to THz, 19 August 2018 - 23 August 2018.
- . Advanced Photon Counting Techniques XI
- . Proceedings of SPIE, Vol. 9988, 26 September 2016 - 27 September 2016.
- . 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS), 26 June 2016 - 30 June 2016.
- . 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS), 26 June 2016 - 30 June 2016.
- Temperature dependence of avalanche gain in Al0.85Ga0.15As0.56Sb0.44 APD. 2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS)
0.52 In0.48 P photodetectors for underwater communication systems. Asia Communications and Photonics Conference, ACPC 2015
Al- . Asia Communications and Photonics Conference 2015, 2015.
- . Sensors, Systems, and Next-Generation Satellites XIX
- . Unmanned/Unattended Sensors and Sensor Networks XI; and Advanced Free-Space Optical Communication Techniques and Applications
- . 2014 IEEE Photonics Conference, 12 October 2014 - 16 October 2014.
- . 2014 IEEE International Conference on Semiconductor Electronics (ICSE2014), 27 August 2014 - 29 August 2014.
- . EMERGING TECHNOLOGIES IN SECURITY AND DEFENCE; AND QUANTUM SECURITY II; AND UNMANNED SENSOR SYSTEMS X, Vol. 8899
- . 2012 IEEE Photonics Conference, IPC 2012 (pp 167-168)
- . Proceedings of SPIE - The International Society for Optical Engineering, Vol. 8256
- . IEEE Nuclear Science Symposium Conference Record (pp 2238-2241)
- . IEEE Nuclear Science Symposium Conference Record (pp 4809-4811)
- . IEEE Nuclear Science Symposium Conference Record (pp 4528-4531)
- . IEEE Nuclear Science Symposium Conference Record (pp 2071-2073)
- . IEEE Photonic Society 24th Annual Meeting, PHO 2011 (pp 276-277)
- . 2010 Photonics Global Conference, PGC 2010
- . 2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010 (pp 126-127)
- . Conference Proceedings - International Conference on Indium Phosphide and Related Materials (pp 421-424)
- . Conference Proceedings - International Conference on Indium Phosphide and Related Materials (pp 187-190)
- . Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7726
- . Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7681
- Extended Wavelength Avalanche Photodiodes. 2009 4TH INTERNATIONAL CONFERENCE ON COMPUTERS AND DEVICES FOR COMMUNICATION (CODEC 2009) (pp 454-457)
- Potential Materials for Avalanche Photodiodes Operating above 10Gb/s. 2009 4TH INTERNATIONAL CONFERENCE ON COMPUTERS AND DEVICES FOR COMMUNICATION (CODEC 2009) (pp 442-447)
- . Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7320
- . Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7298
- Type-II photodiode and APD for detection in the 2-2.5 mu m wavelength range. 2009 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1AND 2 (pp 293-294)
- Dark current mechanisms in InxGa1-xAs1-yNy. 2009 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1AND 2 (pp 233-234)
- Avalanche Multiplication and Impact Ionisation in Separate Absorption and Multiplication 4H-SiC Avalanche Photodiodes. SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, Vol. 600-603 (pp 1207-1210)
- Temperature Dependence of Hole Impact Ionization Coefficient in 4H-SiC Photodiodes. SILICON CARBIDE AND RELATED MATERIALS 2008, Vol. 615-617 (pp 311-314)
- OPTIMIZATION OF InP APDs FOR HIGH-SPEED LIGHTWAVE SYSTEMS. 2008 IEEE 20TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) (pp 319-322)
- DARK CURRENT MECHANISMS IN BULK GaInNAs PHOTODIODES. 2008 IEEE 20TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) (pp 345-348)
- Effects of spacer growth temperature on the optical properties of quantum dot laser structures - art. no. 68000U. DEVICE AND PROCESS TECHNOLOGIES FOR MICROELECTRONICS, MEMS, PHOTONICS AND NANOTECHNOLOGY IV, Vol. 6800 (pp U8000-U8000)
- . Journal of Modern Optics, Vol. 54(12) (pp 1677-1683)
- Impact ionization of sub-micron InP structures. 2007 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 (pp 515-516)
- Temperature dependence of breakdown voltage of InP and InAlAs avalanche photodiodes. 2007 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 (pp 513-514)
- Fabrication of InAs Photodiodes with reduced surface leakage current - art. no. 67400H. OPTICAL MATERIALS IN DEFENCE SYSTEMS TECHNOLOGY IV, Vol. 6740 (pp H7400-H7400)
- Gainnas lattice-matched to GaAs for photodiodes. 2007 International Conference on Indium Phosphide and Related Materials, Conference Proceedings (pp 347-349)
- Determination of impact ionization coefficients measured from 4H-silicon carbide avalanche photodiodes. Silicon Carbide and Related Materials 2006, Vol. 556-557 (pp 339-342)
- InP-based avalanche photodiodes with > 2.1 mu m detection capability. 2007 International Conference on Indium Phosphide and Related Materials, Conference Proceedings (pp 293-295)
- Temperature dependence of inp-based avalanche photodiodes. 2007 International Conference on Indium Phosphide and Related Materials, Conference Proceedings (pp 296-298)
- Extremely low excess noise InAlAs avalanche photodiodes. 2007 International Conference on Indium Phosphide and Related Materials, Conference Proceedings (pp 81-83)
- . IEE P-OPTOELECTRON, Vol. 153(4) (pp 191-194)
- Design, fabrication and characterisation of InGaAs/InP single-photon avalanche diode detectors. Optics InfoBase Conference Papers
- Excess noise and avalanche multiplication in InAlAs. 2006 IEEE LEOS Annual Meeting Conference Proceedings, Vols 1 and 2 (pp 787-788)
- A comparison of the lower limit of multiplication noise in InP and InAlAs based APDs for telecommunications receiver applications. 2006 IEEE LEOS Annual Meeting Conference Proceedings, Vols 1 and 2 (pp 789-790)
- . PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, Vol. 26(1-4) (pp 245-251)
- Avalanche noise in In0.53Ga0.44As avalanching regions. 2005 International Conference on Indium Phosphide and Related Materials (pp 428-431)
- . IEE PROCEEDINGS-OPTOELECTRONICS, Vol. 151(5) (pp 331-334)
- . JOURNAL OF MODERN OPTICS, Vol. 51(9-10) (pp 1315-1321)
- . Device Research Conference - Conference Digest, DRC (pp 79-80)
- 1.55-mu m GaInNAs/GaAs multiple quantum wells with GaInNAs quaternary barrier and space layer. SMIC-XIII: 2004 13th International Conference on Semiconducting & Insulating Materials (pp 189-193)
- In0.53Ga0.47As ionization coefficients deduced from photomultiplication measurements. COMPOUND SEMICONDUCTORS 2002, Vol. 174 (pp 267-270)
- Theoretical study of breakdown probabilities in single photon avalanche diodes. 2003 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 (pp 773-774)
- . IEE P-OPTOELECTRON, Vol. 148(5-6) (pp 225-228)
- Design considerations for high-speed low-noise avalanche photodiodes. DESIGN, FABRICATION, AND CHARACTERIZATION OF PHOTONIC DEVICES II, Vol. 4594 (pp 1-9)
- How avalanche pulses evolve in space and time. PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES IX, Vol. 4283 (pp 511-518)
- (pp 339-342)
Software / Code
Datasets
Other
- Temperature dependence of impact ionization in InAs: erratum.. Opt Express, 22(21), 25923.
- . Optics Express, 22(21), 25923-25923.
Preprints
- Grants
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Dates Sponsor Grant Title PI/co-I Jul 15 - Apr 16 Commercial AIInP detectors PI Jul 15 - Jun 16 Commercial Avalanche photodiodes Co-I Jul 15 - Jun 18 STFC Linear geiger mode detector technology for time resolved spectral measurements PI Mar 15 - Feb 17 Royal Society High-performance photodetectors for mid-infrared light detection PI Jan 15 - Jun 18 EU H2020 PROMIS (Postgraduate Research on Dilute Metamorphic Nanostructures and Metamaterials in Semiconductor Photonics) Co-I Jan 15 - Jun 15 European Space Agency InAs APD development for NIR & SWIR applications (Extension) PI Apr 13 - Oct 16 EPSRC Next generation avalanche photodiodes Co-I Apr 13 - Mar 16 Royal Society Royal Society University Research Fellowship PI Sept 12 - Aug 15 EPSRC InAsNSb dilute nitride materials for mid-infrared devices and applications. Co-I Jun 14 - Oct 14 Commercial InGaAs/InAIAs APDs PI
Jan 13 - Dec 14 European Space Agency InAs APD development for NIR & SWIR applications Co-I Dec 12 - Jun 13 Commercial InGaAs/InAIAs APDs PI Apr 12 - Sept 12 MoD CDE Narrow band APDs for underwater communications Co-I Mar 11 - Feb 13 EPSRC High performance X-ray detectors with sub-100eV energy resolution PI Oct 10 - Sept 13 EPSRC Novel InAS avalanche photodiodes for photon counting applications Co-I Dec 09 - Nov 12 STFC (PIPSS) Knowledge exchange in AIGaAs X-ray detectors PI Apr 09 - Apr 10 EMRS DTC Detector for infrared Algorithmic Spectrometer Co-I Oct 08 - Sept 11 TSB Extended Tempertaure OptoElectronics II (ETOE II) Co-I May 08 - Jul 11 EU FP7 Materials for avalanche receiver for ultimate sensitivity (MARISE) PI May 08 - Jul 10 EPSRC New high-performance avalanche photodiodes based on the unique properties of dilute nitrides. Co-I Nov 07 - Oct 08 MoD Col Detectors for UV non line-of-sight communication Co-I Nov 07 - Oct 08 MoD Col 2 Band Quantum Dot Infrared Photodiodes for Mid and Long Wave Infrared Scene Sensing Co-I Oct 07 - Sept 09 DSTL & STFC Avalanche photodiode array detector for eye-safe 3D imaging PI Apr 07 - Mar 10 EMRS DTC Infrared photodiodes based on Type-II Superlattices Co-I Oct 06 - Mar 13 Royal Society Royal Society University Research Fellowship PI May 06 - Sept 09 European Space Agency Near infrared detectors for LIDAR Co-I Apr 06 - Mar 09 EMRS DTC Co-I Oct 05 - Dec 05 EMRS DTC Novel low voltage InAs avalanche photodiodes for affordable 2D IR detectors. Co-I Apr 04 - Aprt 06 EU FP6 Secure Communications based on Quantum Cryptography Co-I Apr 03 - Mar 05 EMRS DTC High sensitivity avalanche photodiodes for imaging and rangefinding Co-I
- Teaching activities
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- EEE123 (Introduction to Electric and Electronic Circuits)
- AER11003 (Aerospace Electrics and Drives)
- Professional activities and memberships
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- Departmental Director of Research & Innovation
- EEE Women Adviser
- EEE Athena SWAN team member
- Research students
Student Degree Status Primary/Secondary Goldberg G R MPhil Graduated Primary Meng X PhD Graduated Primary Mohmad A R B PhD Graduated Primary Ong D S G PhD Graduated Primary Ong S-L PhD Graduated Primary Dimler S J PhD Graduated Secondary Guerrero Moreno M A MPhil Graduated Secondary