Dr Dmitry Revin
School of Electrical and Electronic Engineering
Research Associate in Biophotonics
Semiconductor Materials and Devices Research Group
- Publications
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Journal articles
1-x Nx grown on GaAs by MOVPE. Izvestiya Akademii Nauk. Ser. Fizicheskaya, 66(2), 193-196.
Optical and electrophysical properties of epitaxial layers GaAs2 :Nc-Si. Materials Research Society Symposium - Proceedings, 692, 607-613.
The influence of annealing temperature and doping on the red/near-infrared luminescence of ion implanted SiO2 matrix by means of dose aligment and doping. Proceedings of the 8th International Symposium Nanostructures: Physics and Technology, 315-317.
The enhancement of luminescence in ion implanted Si quantum dots in SiO- Far infrared emission and absorption (amplification) under real space transfer and population inversion in shallow multi-quantum-wells. Physica Status Solidi (B) Basic Research, 204(1), 563-565.
- Photoluminescence from InGaAs/GaAs MQW heterostructures under real space transfer. Physica Status Solidi (B) Basic Research, 204(1), 184-186.
- IR radiation from hot holes in MQW InGaAs/GaAs heterostructures under real space transfer. Physica Status Solidi (B) Basic Research, 204(1), 178-180.
Chapters
Conference proceedings papers
Preprints