TY  - CONF

T1  - Influence of the device layout on the performance of 20A 1.2kV clustered insulated gate bipolar transistor (CIGBT) in PT technology

JO  - 2006 INTERNATIONAL SYMPOSIUM ON POWER ELECTRONICS, ELECTRICAL DRIVES, AUTOMATION AND MOTION, VOLS 1-3

PY  - 2006/01/01

AU  - Vershinin K

AU  - Sweet M

AU  - Ngwendson L

AU  - Narayanan EMS

ED  - 

SP  - 275

EP  - 278

Y2  - 2024/10/23

ER  -