TY  - JOUR

T1  - Nanocasting of High Surface Area Mesoporous Ga<sub>2</sub>O<sub>3</sub> and GaN Semiconductor Materials

JO  - Chemistry of Materials

UR  - https://doi.org/10.1021/cm902015f

PY  - 2009/08/07

AU  - West C

AU  - Mokaya R

ED  - 

DO  - DOI: 10.1021/cm902015f

PB  - American Chemical Society (ACS)

VL  - 21

IS  - 17

SP  - 4080

EP  - 4086

Y2  - 2025/03/10

ER  -