TY  - JOUR

T1  - Engineering carrier confinement potentials in 1.3-μm InAs/GaAs quantum dots with InAlAs layers: Enhancement of the high-temperature photoluminescence intensity

JO  - Applied Physics Letters

PY  - 2003/11/03

AU  - Liu HY

AU  - Sellers IR

AU  - Hopkinson M

AU  - Harrison CN

AU  - Mowbray DJ

AU  - Skolnick MS

ED  - 

DO  - DOI: 10.1063/1.1622443

PB  - AIP Publishing

VL  - 83

IS  - 18

SP  - 3716

EP  - 3718

Y2  - 2024/12/22

ER  -