TY  - CONF

T1  - Performance of a trench PMOS gated, planar, 1.2 kV clustered insulated gate bipolar transistor in NPT technology

JO  - Proceedings of the International Symposium on Power Semiconductor Devices and ICs

PY  - 2009/01/01

AU  - Luther-King N

AU  - Sweet M

AU  - Sankara Narayanan EM

ED  - 

DO  - DOI: 10.1109/ISPSD.2009.5158027

SN  - 9781424446735

SP  - 164

EP  - 167

Y2  - 2024/12/20

ER  -