TY  - CONF

T1  - The Cause of Subthreshold Leakage Currents Induced by Nucleons and Ions in Power MOSFETs

JO  - IEEE Transactions on Nuclear Science

UR  - http://dx.doi.org/10.1109/tns.2013.2246870

PY  - 2013/03/21

AU  - Chugg AM

AU  - Parker S

AU  - Duncan

AU  - Barber TS

AU  - Hands A

AU  - Morris P

AU  - Poivey C

ED  - 

DO  - DOI: 10.1109/tns.2013.2246870

PB  - Institute of Electrical and Electronics Engineers (IEEE)

VL  - 60

IS  - 4

SP  - 2530

EP  - 2536

Y2  - 2024/12/22

ER  -