@inproceedings{inproceedings, title  = {{Design of an RF LDMOSFET with deep drift and hot carrier immunity using time domain approach}},

 url = {{}},

 year = {{2004}},

 month = {{1}},

 author = {{Cao G and Narayanan EMS and De Souza MM and Flores D and Vellvehi M and Hidalgo S and Millan J and Hinchley D}},

 doi = {{10.1109/wct.2004.239970}},

 volume = {{16}},

 journal = {{IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)}},

 pages = {{241-244}},

 note = {{Accessed on 2024/12/20}}}