TY  - CONF

T1  - Design of an RF LDMOSFET with deep drift and hot carrier immunity using time domain approach

JO  - IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

PY  - 2004/01/01

AU  - Cao G

AU  - Narayanan EMS

AU  - De Souza MM

AU  - Flores D

AU  - Vellvehi M

AU  - Hidalgo S

AU  - Millan J

AU  - Hinchley D

ED  - 

DO  - DOI: 10.1109/wct.2004.239970

VL  - 16

SP  - 241

EP  - 244

Y2  - 2024/12/20

ER  -