TY  - JOUR

T1  - Design of novel high side power MOSFET based on HVIC process

JO  - Electronics Letters

PY  - 1999/01/01

AU  - Xu YZ

AU  - Hardikar S

AU  - DeSouza MM

AU  - Cao GJ

AU  - Narayanan EMS

ED  - 

DO  - DOI: 10.1049/el:19991280

PB  - Institution of Engineering and Technology (IET)

VL  - 35

IS  - 21

SP  - 1880

EP  - 1880

Y2  - 2024/12/20

ER  -