TY  - CONF

T1  - Enhanced photoluminescence intensity of 1.3-mu m multi-layer InAs/InGaAs dots-in-well structure using the high growth temperature spacer layer step

JO  - PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES

PY  - 2005/02/01

AU  - Liu HY

AU  - Badcock TJ

AU  - Sellers IR

AU  - Soong WM

AU  - Groom KM

AU  - Hopkinson M

AU  - Mowbray DJ

AU  - Skolnick MS

ED  - 

DO  - DOI: 10.1016/j.physe.2004.08.038

VL  - 26

IS  - 1-4

SP  - 129

EP  - 132

Y2  - 2024/12/20

ER  -