@inproceedings{inproceedings, title  = {{Breakdown characteristics of (AlXGa1-X)(0.52)In0.48P p-i-n diodes}},

 url = {{}},

 year = {{1996}},

 month = {{1}},

 author = {{David JPR and Ghin R and Plimmer SA and Hopkinson M and Allan J}},

 journal = {{ICSE '96 - 1996 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS}},

 pages = {{256-260}},

 note = {{Accessed on 2024/12/22}}}