TY  - JOUR

T1  - Effect of growth temperature on the optical, electrical and crystallographic properties of epitaxial indium gallium arsenide grown by MOCVD in an atmospheric pressure reactor

JO  - Journal of Crystal Growth

PY  - 1986/12/01

AU  - Bass SJ

AU  - Barnett SJ

AU  - Brown GT

AU  - Chew NG

AU  - Cullis AG

AU  - Pitt AD

AU  - Skolnick MS

ED  - 

DO  - DOI: 10.1016/0022-0248(86)90464-1

PB  - Elsevier BV

VL  - 79

IS  - 1-3

SP  - 378

EP  - 385

Y2  - 2024/12/22

ER  -