TY  - JOUR

T1  - The effect of gate bias stress and temperature on the performance of ZnO Thin Film Transistors

JO  - IEEE Trans. Device and Materials Reliability

PY  - 2008/01/01

AU  - Cross RBM

AU  - De Souza MM

ED  - 

VL  - 8

SP  - 277

Y2  - 2024/12/20

ER  -