TY  - JOUR

T1  - Simulation of impact ionization breakdown in MESFETS using Monte Carlo methods

JO  - Semiconductor Science and Technology

PY  - 1997/01/01

AU  - Dunn GM

AU  - Rees GJ

AU  - David JPR

ED  - 

DO  - DOI: 10.1088/0268-1242/12/9/014

VL  - 12

IS  - 9

SP  - 1147

EP  - 1153

Y2  - 2024/12/20

ER  -