TY  - JOUR

T1  - Realizing high-voltage junction isolated LDMOS transistors with variation in lateral doping

JO  - IEEE Transactions on Electron Devices

PY  - 2004/01/01

AU  - Hardikar S

AU  - Tadikonda R

AU  - Green DW

AU  - Vershinin KV

AU  - Narayanan EMS

ED  - 

DO  - DOI: 10.1109/TED.2004.839104

VL  - 51

IS  - 12

SP  - 2223

EP  - 2228

Y2  - 2024/12/20

ER  -