TY  - JOUR

T1  - The Electron Impact Ionization Rate and Breakdown Voltage in GaAs/Ga0.7A10.3As MQW Structures

JO  - IEEE Electron Device Letters

PY  - 1989/01/01

AU  - David JPR

AU  - Marsland JS

AU  - Roberts JS

ED  - 

DO  - DOI: 10.1109/55.29657

VL  - 10

IS  - 7

SP  - 294

EP  - 296

Y2  - 2024/12/20

ER  -