TY  - JOUR

T1  - High-frequency non-invasive magnetic field-based condition monitoring of SiC power MOSFET modules

JO  - Energies

PY  - 2021/10/15

AU  - Naghibi J

AU  - Mehran K

AU  - Foster MP

ED  - 

DO  - DOI: 10.3390/en14206720

PB  - MDPI AG

VL  - 14

IS  - 20

Y2  - 2024/12/22

ER  -