TY  - CONF

T1  - The dependence of the growth rate of LPCVD grown SiGe quantum wells on the Ge composition and the layer thickness

CY  - Brussels

PY  - -0001/11/30

AU  - Walther T

AU  - Boothroyd CB

AU  - Humphreys CJ

ED  - 

PB  - The Committee of European Societies of Microscopy

VL  - 1

SP  - 317

EP  - 318

Y2  - 2024/12/20

ER  -