TY  - JOUR

T1  - Effect of impact ionization in the InGaAs absorber on excess noise of avalanche photodiodes

JO  - IEEE J QUANTUM ELECT

PY  - 2005/08/01

AU  - Ng JS

AU  - Tan CH

AU  - David JPR

AU  - Rees GJ

ED  - 

DO  - DOI: 10.1109/JQE.2005.850700

VL  - 41

IS  - 8

SP  - 1092

EP  - 1096

Y2  - 2024/12/20

ER  -