TY  - CONF

T1  - Bandgap Engineering of GaAsBi Alloy for Emission of up to 1.52 µm

JO  - 2018 IEEE International Conference on Semiconductor Electronics (ICSE)

PY  - 2018/08/06

AU  - Mohmad AR

AU  - David JPK

ED  - 

DO  - DOI: 10.1109/smelec.2018.8481336

PB  - IEEE

Y2  - 2024/12/20

ER  -