@article{article, title  = {{Mobility and saturation drift velocity enhancement in highly doped GaAs and InxGa1-xAs structures designed for use in power FET devices}},

 url = {{}},

 year = {{1996}},

 month = {{2}},

 author = {{Roberts JM and Harris JJ and Hart L and Hopkinson M and Roberts C}},

 volume = {{32}},

 journal = {{ELECTRON LETT}},

 issue = {{5}},

 pages = {{494-496}},

 note = {{Accessed on 2024/12/22}}}