TY  - JOUR

T1  - Mobility and saturation drift velocity enhancement in highly doped GaAs and InxGa1-xAs structures designed for use in power FET devices

JO  - ELECTRON LETT

PY  - 1996/02/29

AU  - Roberts JM

AU  - Harris JJ

AU  - Hart L

AU  - Hopkinson M

AU  - Roberts C

ED  - 

VL  - 32

IS  - 5

SP  - 494

EP  - 496

Y2  - 2024/12/22

ER  -