TY  - JOUR

T1  - Numerical Evaluation of 10-kV Clustered Insulated Gate Bipolar Transistor in 4H-SiC

JO  - IEEE Transactions on Electron Devices

PY  - 2012/11/26

AU  - Menon KG

AU  - Narayanan EMS

ED  - 

DO  - DOI: 10.1109/TED.2012.2220969

Y2  - 2024/12/20

ER  -