TY  - JOUR

T1  - GaN-based super heterojunction field effect transistors using the polarization junction concept

JO  - IEEE Electron Device Letters

PY  - 2011/01/01

AU  - Nakajima A

AU  - Sumida Y

AU  - Dhyani MH

AU  - Kawai H

AU  - Narayanan EM

ED  - 

DO  - DOI: 10.1109/LED.2011.2105242

VL  - 32

IS  - 4

SP  - 542

EP  - 544

Y2  - 2024/12/20

ER  -