TY  - JOUR

T1  - 1.3 [micro sign]m InAs/GaAs quantum-dot laser with low-threshold current density and negative characteristic temperature above room temperature

JO  - Electronics Letters

PY  - 2006/08/03

AU  - Badcock TJ

AU  - Liu HY

AU  - Groom KM

AU  - Jin CY

AU  - Gutiérrez M

AU  - Hopkinson M

AU  - Mowbray DJ

AU  - Skolnick MS

ED  - 

DO  - DOI: 10.1049/el:20061487

PB  - Institution of Engineering and Technology (IET)

VL  - 42

IS  - 16

SP  - 922

EP  - 922

Y2  - 2024/12/22

ER  -