TY  - JOUR

T1  - A comparison of early stage hot carrier degradation behaviour in 5 and 3 V sub-micron low doped drain metal oxide semiconductor field effect transistors.

JO  - Microelectron. Reliab.

PY  - 2001/01/01

AU  - Souza MMD

AU  - Wang J

AU  - Manhas SK

AU  - Narayanan EMS

AU  - Oates AS

ED  - 

VL  - 41

SP  - 169

EP  - 177

Y2  - 2024/10/23

ER  -