TY  - CONF

T1  - Novel dual gated lateral MOS-Bipolar power device

JO  - IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

PY  - 1999/01/01

AU  - Hardikar S

AU  - Sankara Narayanan EM

AU  - De Souza MM

AU  - Huang AQ

AU  - Amaratunga G

ED  - 

SP  - 261

EP  - 264

Y2  - 2024/12/20

ER  -