TY  - JOUR

T1  - Novel gate geometry for the IGBT: The trench planar insulated gate bipolar transistor (TPIGBT)

JO  - IEEE Electron Device Letters

PY  - 1999/01/01

AU  - Spulber O

AU  - Sankara Narayanan EM

AU  - Hardikar S

AU  - De Souza MM

AU  - Sweet M

AU  - Subhas Chandra Bose JV

ED  - 

DO  - DOI: 10.1109/55.798050

VL  - 20

IS  - 11

SP  - 580

EP  - 582

Y2  - 2024/10/23

ER  -