@inproceedings{inproceedings, title  = {{Evaluation of Drain-Source Voltage in Switch Transient Time Intervals as
Gate Oxide Degradation Precursor of SiC Power MOSFETs}},

 url = {{}},

 year = {{2022}},

 month = {{9}},

 author = {{Foster M and Naghibi J and Mohsenzade S and Mehran K}},

 journal = {{24th European Conference on Power Electronics and Applications  EPE'22 ECCE Europe}},

 note = {{Accessed on 2024/12/22}}}