TY  - CONF

T1  - A study of the influence of technology on the negative gate capacitance in 1.2kV IGBTs

JO  - Proceedings of the International Symposium on Power Semiconductor Devices and ICs

PY  - 2008/01/01

AU  - Kong ST

AU  - Ngwendson L

AU  - Sweet M

AU  - Sankara Narayanan EM

ED  - 

DO  - DOI: 10.1109/ISPSD.2008.4538927

SN  - 9781424415328

SP  - 177

EP  - 180

Y2  - 2024/12/20

ER  -