TY  - CONF

T1  - Extending the bounds of performance in E-mode p-channel GaN MOSHFETs

JO  - 2016 IEEE International Electron Devices Meeting (IEDM)

UR  - http://eprints.whiterose.ac.uk/119664/

PY  - 2016/12/05

AU  - Kumar A

AU  - De Souza MM

ED  - 

DO  - DOI: 10.1109/IEDM.2016.7838368

Y2  - 2024/12/20

ER  -