@article{article, title  = {{Increased static R ON in GaN-on-silicon power transistors under high-side operation with floating substrate conditions}},

 publisher = {{Institution of Engineering and Technology (IET)}},

 url = {{}},

 year = {{2015}},

 month = {{1}},

 author = {{Unni V and Kawai H and Narayanan EMS}},

 doi = {{10.1049/el.2014.3723}},

 volume = {{51}},

 journal = {{Electronics Letters}},

 issue = {{1}},

 pages = {{108-110}},

 note = {{Accessed on 2024/10/23}}}