TY  - JOUR

T1  - Increased static R ON in GaN-on-silicon power transistors under high-side operation with floating substrate conditions

JO  - Electronics Letters

PY  - 2015/01/08

AU  - Unni V

AU  - Kawai H

AU  - Narayanan EMS

ED  - 

DO  - DOI: 10.1049/el.2014.3723

PB  - Institution of Engineering and Technology (IET)

VL  - 51

IS  - 1

SP  - 108

EP  - 110

Y2  - 2024/12/20

ER  -