TY  - JOUR

T1  - Monolithic integration of a high-performance clustered insulated gate bipolar transistor with low-voltage components to form a 3 kV intelligent power chip

JO  - Microelectronics Journal

PY  - 2001/01/01

AU  - Sweet M

AU  - Ngw CK

AU  - Spulber O

AU  - Ngwendson JVL

AU  - Vershinin KV

AU  - Bose SC

AU  - De Souza MM

AU  - Narayanan EMS

ED  - 

DO  - DOI: 10.1016/S0026-2692(01)00025-8

VL  - 32

IS  - 5-6

SP  - 527

EP  - 536

Y2  - 2024/12/20

ER  -