TY  - JOUR

T1  - Design for reliability: The RF power LDMOSFET

JO  - IEEE Transactions on Device and Materials Reliability

PY  - 2007/03/01

AU  - De Souza MM

AU  - Fioravanti P

AU  - Cao G

AU  - Hinchley D

ED  - 

DO  - DOI: 10.1109/TDMR.2006.889265

VL  - 7

IS  - 1

SP  - 162

EP  - 174

Y2  - 2024/12/20

ER  -