TY  - JOUR

T1  - Effects of rapid thermal annealing on deep-level defects and optical properties of n-type GaAsBi alloys grown by molecular beam epitaxy at low temperature

JO  - Materials Science in Semiconductor Processing

UR  - http://dx.doi.org/10.1016/j.mssp.2023.107888

PY  - 2024/01/01

AU  - Gelczuk Ł

AU  - Kopaczek J

AU  - Pucicki D

AU  - Rockett TBO

AU  - Richards RD

AU  - Kudrawiec R

ED  - 

DO  - DOI: 10.1016/j.mssp.2023.107888

PB  - Elsevier BV

VL  - 169

SP  - 107888

EP  - 107888

Y2  - 2024/12/20

ER  -