TY  - JOUR

T1  - The world’s first high voltage GaN-on-Diamond power semiconductor devices

JO  - Solid-State Electronics

UR  - http://eprints.whiterose.ac.uk/107228/

PY  - 2016/11/01

AU  - Baltynov T

AU  - Unni V

AU  - Narayanan EMS

ED  - 

DO  - DOI: 10.1016/j.sse.2016.07.022

VL  - 125

SP  - 111

EP  - 117

Y2  - 2024/12/20

ER  -