TY  - JOUR

T1  - Barrier width dependence of leakage currents in InGaAs/ GaAs multiple quantum well P-I-N diodes

JO  - Journal of Electronic Materials

PY  - 1991/01/01

AU  - David JPR

AU  - Grey R

AU  - Pate MA

AU  - Claxton PA

AU  - Woodhead J

ED  - 

DO  - DOI: 10.1007/BF02657893

VL  - 20

IS  - 4

SP  - 295

EP  - 297

Y2  - 2024/12/20

ER  -