TY  - JOUR

T1  - Realizing high breakdown voltages (>600 V) in partial SOI technology

JO  - Solid-State Electronics

PY  - 2004/01/01

AU  - Tadikonda R

AU  - Hardikar S

AU  - Narayanan EMS

ED  - 

DO  - DOI: 10.1016/j.sse.2004.04.005

VL  - 48

IS  - 9

SP  - 1655

EP  - 1660

Y2  - 2024/12/20

ER  -