TY  - JOUR

T1  - The effect of gate-bias stress and temperature on the performance of ZnO thin-film transistors

JO  - IEEE Transactions on Device and Materials Reliability

PY  - 2008/06/01

AU  - Cross RBM

AU  - De Souza MM

ED  - 

DO  - DOI: 10.1109/TDMR.2008.916307

VL  - 8

IS  - 2

SP  - 277

EP  - 282

Y2  - 2025/03/11

ER  -