TY  - JOUR

T1  - Effect of experimental parameters on doping contrast of Si p?n junctions in a FEG-SEM

JO  - Microelectronic Engineering

UR  - http://dx.doi.org/10.1016/j.mee.2004.03.080

PY  - 2004/06/01

AU  - KAZEMIAN P

ED  - 

DO  - DOI: 10.1016/j.mee.2004.03.080

PB  - Elsevier BV

VL  - 73-74

SP  - 948

EP  - 953

Y2  - 2024/12/21

ER  -