@inproceedings{inproceedings, title  = {{2.4kV GaN Polarization Superjunction Schottky Barrier Diodes on semi-insulating 6H-SiC substrate}},

 publisher = {{IEEE}},

 url = {{}},

 year = {{2014}},

 month = {{1}},

 author = {{Unni V and Long H and Sweet M and Balachandran A and Narayanan EMS and Nakajima A and Kawai H}},

 doi = {{10.1109/ispsd.2014.6856022}},

 isbn = {{9781479929177}},

 journal = {{2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD)}},

 note = {{Accessed on 2024/12/20}}}