TY  - CONF

T1  - Epitaxial growth by RP-CVD of relaxed germanium layers on (110) and (111) silicon substrates

PY  - -0001/11/30

AU  - Nguyen VH

AU  - Dobbie A

AU  - Myronov M

AU  - Norris DJ

AU  - Walther T

AU  - Leadley DR

ED  - 

VL  - abstract booklet

Y2  - 2024/12/20

ER  -