TY  - JOUR

T1  - Low-temperature (≤600 °C) semi-insulating oxygen-doped silicon films by the PECVD technique for large-area power applications

JO  - Thin Solid Films

PY  - 1995/01/01

AU  - Clough FJ

AU  - Brown AO

AU  - Madathil SNE

AU  - Milne WI

ED  - 

DO  - DOI: 10.1016/0040-6090(95)06834-1

VL  - 270

IS  - 1-2

SP  - 517

EP  - 521

Y2  - 2024/12/20

ER  -