TY  - JOUR

T1  - Characterisation of defects in p-GaN by admittance spectroscopy

JO  - Physica B: Condensed Matter

PY  - 2012/01/01

AU  - Elsherif OS

AU  - Vernon-Parry KD

AU  - Evans-Freeman JH

AU  - Airey RJ

AU  - Kappers M

AU  - Humphreys CJ

ED  - 

DO  - DOI: 10.1016/j.physb.2011.08.077

VL  - 407

IS  - 15

SP  - 2960

EP  - 2963

Y2  - 2024/12/20

ER  -