TY  - JOUR

T1  - Continuous-wave operation of InGaN multiple quantum well laser diodes grown by molecular beam epitaxy

JO  - Electronics Letters

PY  - 2005/01/01

AU  - Kauer M

AU  - Hooper SE

AU  - Bousquet V

AU  - Johnson K

AU  - Zellweger C

AU  - Barnes JM

AU  - Windle J

AU  - Smeeton TM

AU  - Heffernan J

ED  - 

DO  - DOI: 10.1049/el:20051430

PB  - Institution of Engineering and Technology (IET)

VL  - 41

IS  - 13

SP  - 739

EP  - 739

Y2  - 2024/12/22

ER  -