TY  - JOUR

T1  - 1.3 [micro sign]m InAs∕GaAs multilayer quantum-dot laser with extremely low room-temperature threshold current density

JO  - Electronics Letters

PY  - 2004/10/28

AU  - Sellers IR

AU  - Liu HY

AU  - Groom KM

AU  - Childs DT

AU  - Robbins D

AU  - Badcock TJ

AU  - Hopkinson M

AU  - Mowbray DJ

AU  - Skolnick MS

ED  - 

DO  - DOI: 10.1049/el:20046692

PB  - Institution of Engineering and Technology (IET)

VL  - 40

IS  - 22

SP  - 1412

EP  - 1412

Y2  - 2025/03/13

ER  -