TY - JOUR T1 - 1.3 [micro sign]m InAs∕GaAs multilayer quantum-dot laser with extremely low room-temperature threshold current density JO - Electronics Letters PY - 2004/10/28 AU - Sellers IR AU - Liu HY AU - Groom KM AU - Childs DT AU - Robbins D AU - Badcock TJ AU - Hopkinson M AU - Mowbray DJ AU - Skolnick MS ED - DO - DOI: 10.1049/el:20046692 PB - Institution of Engineering and Technology (IET) VL - 40 IS - 22 SP - 1412 EP - 1412 Y2 - 2025/03/11 ER -