TY  - JOUR

T1  - Real-Time Measurement of Temperature Sensitive Electrical Parameters in SiC Power MOSFETs

JO  - IEEE Transactions on Industrial Electronics

UR  - http://eprints.whiterose.ac.uk/118921/

PY  - 2017/08/14

AU  - Griffo A

AU  - Wang J

AU  - Colombage K

AU  - Kamel T

ED  - 

DO  - DOI: 10.1109/TIE.2017.2739687

PB  - Institute of Electrical and Electronics Engineers

VL  - 65

IS  - 3

SP  - 2663

EP  - 2671

Y2  - 2024/12/20

ER  -