TY  - JOUR

T1  - A Gate Driver-Level Isolated Monitoring Technique for Gate Oxide Degradation in Silicon Carbide Power MOSFETs

JO  - IEEE Transactions on Power Electronics

UR  - http://dx.doi.org/10.1109/tpel.2024.3488581

PY  - 2024/01/01

AU  - Naghibi J

AU  - Mohsenzade S

AU  - Mehran K

AU  - Foster MP

ED  - 

DO  - DOI: 10.1109/tpel.2024.3488581

PB  - Institute of Electrical and Electronics Engineers (IEEE)

SP  - 1

EP  - 12

Y2  - 2024/12/22

ER  -